BS IEC 60747-9:1998 pdf download – Semiconductordevices— Discrete devices — Part 9: Insulated-gate bipolartransistors (IGBTs)

BS IEC 60747-9:1998 pdf download – Semiconductordevices— Discrete devices — Part 9: Insulated-gate bipolartransistors (IGBTs).
This part of IEC 60747 gives product specific standards for terminology, letter symbols. essential ratings and characteristics and measuring methods for insulated-gate bipolar transistors (IGBTs).
2 NormatIve references
The following normative documents contain provisions which, through reference in this text. constitute provisions of this part of IEC 60747. At the time of publication, the editions indicated were valid All normative documents are subject to revision, and parties to agreements based on this part of IEC 60747 are encouraged to investigate the possibility of applying the most recent editions of the normative documents indecated below. Members of IEC and ISO maintain registers of currently valid International Standards.
IEC 60617-5:1996, Graphical symbols for diagrams — Part 5: Semiconductors and electron tubes
IEC 60747-1:1983, Semiconductor devices — Discrete devices and Integrated circuits — Part 1:
General
IEC 60747-2:1983, Semiconductor devices — Discrete devices and integrated circuits — Part 2:
Rectifier diodes
IEC 60747-7:2000, Semiconductor discrete devices and integrated circuits — Part 7: Bipolar transistors
3 DefInitions
For the purpose of this standard, the following definitions apply
3.1 G.n.ral t.rms
3.1.1
insulated-gate bipolar transistor (IGBT)
transistor provided for power switching having a conduction channel and a PN junction and In which the current flowing through the channel and the function is controlled by an electric field resulting from a voltage applied between the gate and emitter terminals
NOTE WitI collector-emitter voetage applied the PM junction ii forward biased.
3.1.2
N-channel IGBT
IGBT that has one or more N-type conduction channels
3.1.3
P-channel IGBT
IGBT that has one or more P-type conduction channels
3.1.4
collector current (ta,) (of an IGBT)
direct current that is switched (controlled) by the IGBT
3.1.5
collector termInal, collector (C) (of an IGBT)
for an N-channel (a P-channel) IGBT the terminal to (from) which the collector current flows from (to) the external circuit
3.1.6
emitter terminal, emitter (E) (of an IGBT)
for an N-channel (a P-channel) IGBT the terminal from (to) which the collector current flows to (from) the external circuit
3.1.7
gat. terminal, gate (0) (of an 1067)
terminal to which a voltage is applied against the emitter terminal in order to control the collector current
3.2 Terms related to ratings and characteristics; voltages and currents
3.2.1
collector (-emitter) breakdown voltage (V(SR)CCS)
voltage between collector and emitter above which the collector current rises steeply, with gate to emitter short-circuited
3.2.2
collector (-emitter) saturation voltage (Vcat)
collector-emitter voltage under conditions of gate-emitter voltage at which the collector current is essentially independent of the gate-emitter voltage
3.2.3
(gate-.mltter) thr.shold voltage (VOE(yO))
gate-emitter voltage at which the collector current has a specified low (absolute) value
3.2.4
collector (-emitter) cut-off current (ICES)
collector current at a specified collector-emitter voltage below the breakdown region and with gate to emitter short-circuited
3.2.5
gate leakage current (bEe)
leakage current into the gate terminal at a specified gate-emitter voltage with the collector terminal short-circuited to the emitter terminal.